2SK3899 - MOS Field Effect Transistor

Product Overview

Guangdong Kexin

Part number	2SK3899
Manufacturer	Guangdong Kexin
File Size	72.98 KB
Description	MOS Field Effect Transistor
Datasheet	2SK3899 Datasheet
Additional preview pages of the 2SK3899 datasheet.

Low On-state resistance RDS(on)1 = 5.3mÙ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 6.5 mÙ MAX. (VGS = 4.5 V, ID = 42 A) Low C iss: C iss = 5500 pF TYP. +0.2 8.7-0.2 +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 +0.2 5.28-0.2 2.54 5.08 +0.1 -0.1 +0.2 2.54-0.2 +0.2 15.25-0.2 +0.2 2.54-0.2 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TA=25 TC=25 Channel temperature Storage temperature.
PW 10 s,Duty Cycle 1%.

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Published: Apr 6, 2009 |