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SB31xx-1.8 - Chips

This page provides the datasheet information for the SB31xx-1.8, a member of the SB31xx-18 Chips family.

Datasheet Summary

Description

Schottky Diode chips with Mo-barrier for switch mode power rectifiers with the following

Features

  • Guard-ring for stress protection.
  • Extremely low forward voltage.
  • 125 ℃ operation junction temperature.
  • reverse avalanche behavior Mechanical Data: SB 3XX passivated Silicon Chip Demension(mm) 1,8x1,8 Thickness: 350 +- 20 µm Metallization: Top ( Anode ) : Al Ag Bottom ( Cathode) : TiNiAg Forward Current(A) 3A Reverse Voltage (V):23, 43, 100 V Type SB320 SB340 SB3100 Chip size(mm) VR(V) VF(V)@25 C at If=1A IRM@VRMM at 25 C 1,8x1,8 1,8x1,8 1,8x1,8 23 V 43 V 100 V 440mV.

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Datasheet preview – SB31xx-1.8

Datasheet Details

Part number SB31xx-1.8
Manufacturer Gunter Seniconductor
File Size 80.34 KB
Description Chips
Datasheet download datasheet SB31xx-1.8 Datasheet
Additional preview pages of the SB31xx-1.8 datasheet.

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    www.DataSheet4U.com SB 3XX -1.
    Published: |