• Part: GC3M0032120D
  • Description: Silicon Carbide Power MOSFET
  • Category: MOSFET
  • Manufacturer: Gwok
  • Size: 3.72 MB
Download GC3M0032120D Datasheet PDF
Gwok
GC3M0032120D
Features - VDS 12 00 V High blocking voltage with low on-resistance - High-speed switching with low capacitances - - Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, Ro HS pliant ID @ 25˚C RDS(on) 63 A 32 mΩ Benefits - Reduce switching losses and minimize gate ringing - Higher system efficiency - Reduce cooling requirements - Increase power density - Increase system switching frequency Applications - Solar inverters - EV motor drive - High voltage DC/DC converters - Switched mode power supplies TO-247-3 Package Part Number GC3M0032120D Package TO-247-3 Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Value Unit Test Conditions VDSmax VGSmax VGSop Drain - Source Voltage Gate - Source Voltage (dynamic) Gate - Source Voltage (static) Continuous Drain Current 1200 -8/+19 -4/+15 63 48 V VGS = 0 V, ID = 100 μA V AC (f >1 Hz) V...