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GC3M0032120D - Silicon Carbide Power MOSFET

Key Features

  • VDS 12 00 V High blocking voltage with low on-resistance.
  • High-speed switching with low capacitances.
  • Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant ID @ 25˚C RDS(on) 63 A 32 mΩ Benefits.
  • Reduce switching losses and minimize gate ringing.
  • Higher system efficiency.
  • Reduce cooling requirements.
  • Increase power density.
  • Increase system switching frequency Applicati.

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Datasheet Details

Part number GC3M0032120D
Manufacturer Gwok
File Size 3.72 MB
Description Silicon Carbide Power MOSFET
Datasheet download datasheet GC3M0032120D Datasheet

Full PDF Text Transcription (Reference)

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Wuxi Gwok Semiconductor Co.