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GC3M0160120D Datasheet Silicon Carbide Power MOSFET

Manufacturer: Gwok

Overview: Wuxi Gwok Semiconductor Co.,Ltd GC3M0160120D Silicon Carbide Power MOSFET N-Channel Enhancement.

Datasheet Details

Part number GC3M0160120D
Manufacturer Gwok
File Size 3.67 MB
Description Silicon Carbide Power MOSFET
Datasheet GC3M0160120D-Gwok.pdf

Key Features

  • High blocking voltage with low On- resistan ce VD S 1200 V.
  • High speed switching with low capacitances.
  • Fast intrinsic diode with low reverse recovery (Qrr) ID @ 25˚C 17 A.
  • Halogen free, RoHS compliant RDS(on) 160 mΩ Benefits.
  • Higher system efficiency.
  • Reduced cooling requirements.
  • Increased power density.
  • Increased system switching frequency.

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GC3M0160120D Distributor