GC3M0160120D Description
Wuxi Gwok Semiconductor Co.,Ltd GC3M0160120D Silicon Carbide Power MOSFET N-Channel Enhancement Mode.
GC3M0160120D Key Features
- High blocking voltage with low On- resistan ce VD S 1200 V
- High speed switching with low capacitances
- Fast intrinsic diode with low reverse recovery (Qrr)
- Halogen free, RoHS pliant
- Higher system efficiency
- Reduced cooling requirements
- Increased power density
- Increased system switching frequency