GC4D20120H - Silicon Carbide Schottky Diode

Product Overview

Part number	GC4D20120H
Manufacturer	Gwok
File Size	1.17 MB
Description	Silicon Carbide Schottky Diode
Datasheet	GC4D20120H Datasheet
Additional preview pages of the GC4D20120H datasheet.

1.2kV Schottky Rectifier.
Zero Reverse Recovery Current.
High-Frequency Operation.
Temperature-Independent Switching.
Extremely Fast Switching.
Positive Temperature Coefficient on VF VRRM = 1200 V IF (TC=135˚C) = 26 A Qc = 99 nC Benefits.
Replace Bipolar with Unipolar Rectifiers.
Essentially No Switching Losses.
Higher Efficiency.
Reduction of Heat Sink Requirements.
P.

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Published: Nov 8, 2024 |