GC4D20120H Description
Wuxi Gwok Semiconductor Co.,Ltd GC4D20120H Silicon Carbide Schottky Diode.
GC4D20120H Key Features
- 1.2kV Schottky Rectifier
- Zero Reverse Recovery Current
- High-Frequency Operation
- Temperature-Independent Switching
- Extremely Fast Switching
- Positive Temperature Coefficient on VF
- Replace Bipolar with Unipolar Rectifiers
- Essentially No Switching Losses
- Higher Efficiency
- Reduction of Heat Sink Requirements