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GC4D20120H - Silicon Carbide Schottky Diode

Features

  • 1.2kV Schottky Rectifier.
  • Zero Reverse Recovery Current.
  • High-Frequency Operation.
  • Temperature-Independent Switching.
  • Extremely Fast Switching.
  • Positive Temperature Coefficient on VF VRRM = 1200 V IF (TC=135˚C) =    26 A Qc =     99 nC Benefits.
  • Replace Bipolar with Unipolar Rectifiers.
  • Essentially No Switching Losses.
  • Higher Efficiency.
  • Reduction of Heat Sink Requirements.
  • P.

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Datasheet preview – GC4D20120H

Datasheet Details

Part number GC4D20120H
Manufacturer Gwok
File Size 1.17 MB
Description Silicon Carbide Schottky Diode
Datasheet download datasheet GC4D20120H Datasheet
Additional preview pages of the GC4D20120H datasheet.

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Full PDF Text Transcription

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Wuxi Gwok Semiconductor Co.,Ltd GC4D20120H Silicon Carbide Schottky Diode Features • 1.
Published: |