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GC4D30120D - Silicon Carbide Schottky Diode

Features

  • 1.2kV Schottky Rectifier.
  • Zero Reverse Recovery Current.
  • High-Frequency Operation.
  • Temperature-Independent Switching.
  • Extremely Fast Switching Benefits.
  • Replace Bipolar with Unipolar Rectifiers.
  • Essentially No Switching Losses.
  • Higher Efficiency.
  • Reduction of Heat Sink Requirements.
  • Parallel Devices Without Thermal Runaway.

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Datasheet preview – GC4D30120D

Datasheet Details

Part number GC4D30120D
Manufacturer Gwok
File Size 1.99 MB
Description Silicon Carbide Schottky Diode
Datasheet download datasheet GC4D30120D Datasheet
Additional preview pages of the GC4D30120D datasheet.

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Full PDF Text Transcription

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Wuxi Gwok Semiconductor Co.,Ltd GC4D30120D Silicon Carbide Schottky Diode Features • 1.
Published: |