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GC4D40120D - Silicon Carbide Schottky Diode

Features

  • 1.2kV Schottky Rectifier.
  • Zero Reverse Recovery Current.
  • High-Frequency Operation.
  • Temperature-Independent Switching.
  • Extremely Fast Switching VRRM = IF( TC=135˚C) = Qc = 1200 V 54A.
  • 198nC.
  • Benefits m.
  • Replace Bipolar with Unipolar Rectifiers.
  • Essentially No Switching Losses o.
  • Higher Efficiency.
  • Reduction of Heat Sink Requirements c.
  • Parallel Devices Without Thermal Runaway . App.

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Datasheet Details

Part number GC4D40120D
Manufacturer Gwok
File Size 1.34 MB
Description Silicon Carbide Schottky Diode
Datasheet download datasheet GC4D40120D Datasheet
Additional preview pages of the GC4D40120D datasheet.

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Full PDF Text Transcription

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GC4D40120D Silicon Carbide Schottky Diode Features • 1.2kV Schottky Rectifier • Zero Reverse Recovery Current • High-Frequency Operation • Temperature-Independent Switching • Extremely Fast Switching VRRM = IF( TC=135˚C) = Qc = 1200 V 54A** 198nC** Benefits m • Replace Bipolar with Unipolar Rectifiers • Essentially No Switching Losses o • Higher Efficiency • Reduction of Heat Sink Requirements c • Parallel Devices Without Thermal Runaway .
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