026M - N-Channel Enhancement Mode Power MOSFET

Description

The HM2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

VDS = 20V,ID = 2.9A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package D G S Schematic diagram 3D 026M G1 2S Marking and pin Assignment.

H&M Semiconductor

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Datasheet Details

Part number	026M
Manufacturer	H&M Semiconductor
File Size	418.83 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	026M Datasheet
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HM2302 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS = 20V,ID = 2.9A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.

Published: Apr 12, 2021 |