• Part: BSS138
  • Description: N-Channel 50-V(D-S) MOSFET
  • Category: MOSFET
  • Manufacturer: H&M Semiconductor
  • Size: 347.67 KB
Download BSS138 Datasheet PDF
H&M Semiconductor
BSS138
FEATURE Low On-Resistance Low Gate Threshold Voltage Fast Switching Speed Low Input / Output Leakage SOT-23 1. GATE 2. SOURCE 3. DRAI Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Continuous Gate-Source Voltage Continuous Drain Current Power Dissipation Thermal Resistance from Junction to Ambient Operating Temperature Storage Temperature Symbol V DS VGSS ID PD RθJA Tj T stg Value 50 ±12 0.34 0.35 357 150 -55 ~+150 Unit A W ℃/W ℃ A,Dec,2010 Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit Off characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA VDS =0V, VGS =±12V ±1 µA Gate-body leakage IGSS VDS =0V, VGS =±10V ±0.5 µA VDS =0V, VGS =±5V ±0.05 µA Zero gate voltage drain current IDSS VDS =50V, VGS =0V µA On characteristics Gate-threshold voltage Static drain-source on-resistance VGS(th) RDS(on) VDS =VGS, ID =0.25m A 0....