Download HM100P35E Datasheet PDF
H&M Semiconductor
HM100P35E
Description The HM100P35E uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or power management. General Features - VDS = -35V,ID = -100A RDS(ON) <7.2mΩ @ VGS=-10V - High power and current handing capability - Lead free product is acquired - Surface mount package Application - Power management - Load switch Schematic diagram HM100P35E Marking and pin assignment TO-220-3L top view Package Marking and Ordering Information Device Marking Device Device Package TO-220-3L Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range TJ,TSTG Limit -35 ±20 -100 -300 75 -55 To 150 Unit V V A A W...