HM10DN06D
Description
The HM10DN06D is the highest performance trench N-ch MOSFET with extreme high cell density,which provide excellent RDSON and gate chargens for most of the synchronous buck converter applications .
The HM10DN06D meet the Ro HS and Green Product requirement,100% EAS guaranteed with full function reliability approved.
Product Summery
BVDSS
RDSON
60V
34 mΩ
ID 10 A
Applicatio z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch
Schematic diagram
Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cd V/dt effect decline z 100% EAS Guaranteed z Green Device Available
DFN5X6-8L t op view
Absolute Maximum Ratings
Symbol VDS VGS
ID@TC=25℃ ID@TC=70℃
IDM EAS IAS PD@TA=25℃ TSTG
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3
Avalanche...
