HM11P20K - P-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

General Description

The HM11P20K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

VDS =-200V,ID =-11A RDS(ON).

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HM11P20K p-channel enhancement mode power mosfet by H&M Semiconductor - Datasheet Preview

Datasheet Details

Part number	HM11P20K
Manufacturer	H&M Semiconductor
File Size	661.64 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	HM11P20K Datasheet

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P-Channel Enhancement Mode Power MOSFET Description The HM11P20K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-200V,ID =-11A RDS(ON) <300mΩ @ VGS=-10V （Typ.