HM3400E - N-Channel 30V MOSFET

Product Overview

H&M Semiconductor

Datasheet Details

Part number	HM3400E
Manufacturer	H&M Semiconductor
File Size	898.12 KB
Description	N-Channel 30V MOSFET
Datasheet	HM3400E Datasheet
Additional preview pages of the HM3400E datasheet.

Product details

Description

The HM3400E is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. Power Management in Note book Portable Equipment Battery Powered System Load Switch

Features

ES.
RDS(ON)= 450 mΩ @VGS=4.5V.
RDS(ON)= 550 mΩ @VGS=2.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.
Capable doing Cu wire bonding DSC N-Channel 3D 3400E G1 2S Marking and pin Assignment SOT-23 top view Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Maximum Ratings 30 ±10 Unit V V.
Th Nov, 2013-Ver1.0.

📁 Similar Datasheet

HM3401D - P-Channel MOSFET (VBsemi)
HM3407 - P-Channel MOSFET (VBsemi)
HM3422 - N-Channel 60V MOSFET (VBsemi)
HM3440 - Synchronous Buck-Boost DC/DC Regulator (H&M semi)
HM3-6514-9 - 1024 x 4 CMOS RAM (Intersil Corporation)
HM3-6514B-9 - 1024 x 4 CMOS RAM (Intersil Corporation)
HM3-6514S-9 - 1024 x 4 CMOS RAM (Intersil Corporation)
HM3-65764 - High Speed CMOS SRAM (Matra Design Semiconductor)

Other Datasheets by H&M Semiconductor

HM3400 - N-Channel Enhancement Mode Power MOSFET
HM3400B - N-Channel Enhancement Mode Power MOSFET
HM3400C - N-Channel Enhancement Mode Power MOSFET
HM3400D - N-Channel Enhancement Mode Power MOSFET
HM3400DR - N-Channel Enhancement Mode Power MOSFET
HM3400F - N-Channel Enhancement Mode Power MOSFET

Published: Jun 30, 2025 |