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HM3422 - N-Channel Enhancement Mode Power MOSFET

General Description

The HM3422 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS =60V,ID =3A RDS(ON).

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Full PDF Text Transcription for HM3422 (Reference)

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HM3422 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3422 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gat...

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y to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS =60V,ID =3A RDS(ON) <105mΩ @ VGS=10V RDS(ON) < 125mΩ @ VGS=4.