Datasheet Details
| Part number | HM4110 |
|---|---|
| Manufacturer | H&M Semiconductor |
| File Size | 663.02 KB |
| Description | N-Channel Enhancement Mode MOSFET |
| Datasheet | HM4110-HMSemiconductor.pdf |
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Overview: +0 100VDS／±25VGS／170A(ID) N-Channel Enha ncement Mode.
| Part number | HM4110 |
|---|---|
| Manufacturer | H&M Semiconductor |
| File Size | 663.02 KB |
| Description | N-Channel Enhancement Mode MOSFET |
| Datasheet | HM4110-HMSemiconductor.pdf |
|
|
|
HM4110 Marking and pin Assignment TO-220-3L top view Package Marking and Ordering Information Device Marking HM4110 Device HM4110 Device Package TO-220-3L Reel Size - Tape width - Page 1 Quantity - HM4110 100VDS／±25VGS／170A(ID) N-Channel Enha ncement Mode MOSFET Electrical Characteristics of CP Test (TA=25°C unless otherwise noted) Symbol Parameter Test Conditions Min.
Typ Max.
Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V,ID=250uA 100 V IDSS Zero Gate Voltage Drain Current VDS=80V,VGS=0V TJ=85°C 1 30 uA VGS(th) Gate Threshold Voltage VDS=VGS,ID=250uA 2 2.8 4V IGSS Gate Leakage Current VGS=±25V, VDS=0V ±100 nA RDS(on) VSD RG Drain-Source On-Resistance Diode Forward Voltage Gate Resistance VGS=10V, ID=30A ISD=30A,VGS=0V VGS=0V, VDS=0V, Frequency=1MHz 4.5 5.5 mΩ 1.3 V 2 Ω Note: 1: Pulse test ;
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