Description
HM4110
Marking and pin Assignment
TO-220-3L top view
Package Marking and Ordering Information
Device Marking HM4110
Device HM4110
Device Package TO-220-3L
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Tape width -
Page 1
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HM4110
100VDS／±25VGS／170A(ID) N-Channel Enha ncement Mode MOSFET
Electrical Characteri
Features
VDSS=0V／VGSS=±25V／ID=10A
RDS(ON)=5mΩ(max. )@VGS=10V.
Low Dense Cell Design.
Reliable and Rugged.
Advanced trench process technology
.
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100VDS／±25VGS／170A(ID) N-Channel Enha ncement Mode MOSFET
Features
VDSS=0V／VGSS=±25V／ID=10A
RDS(ON)=5mΩ(max.
HM4110 Datasheet
