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HM4843 - Dual P-Channel Enhancement Mode Power MOSFET

General Description

The HM4843 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch and battery protection applications.

Key Features

  • VDS = -40V,ID = -5.0A RDS(ON) < 126mΩ @ VGS=-4.5V RDS(ON) < 85mΩ @ VGS=-10V D1 G1 G2 D2 S1 S2 Schematic diagram HM4843.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package Marking and pin Assignment.

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HM4843 Dual P-Channel Enhancement Mode Power MOSFET Description The HM4843 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch and battery protection applications. General Features ● VDS = -40V,ID = -5.0A RDS(ON) < 126mΩ @ VGS=-4.