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HM530 Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

Overview: +0 N-Channel Enhancement Mode Power MOSFET.

HM530 datasheet preview

Datasheet Details

Part number	HM530
Manufacturer	H&M Semiconductor
File Size	350.40 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM530-HMSemiconductor.pdf

General Description

The +0 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

GENERAL

Key Features

VDS =100V,ID =17A RDS(ON) < 70mΩ @ VGS=10V (Typ:56mΩ).
High density cell design for ultra low Rdson.
Fully characterized Avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability Schematic diagram +0.

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