HM607K Description
uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
HM607K Key Features
- VDS =-30V,ID =- 25A RDS(ON) <mΩ @ VGS=-10V RDS(ON) <5mΩ @ VGS=-4.5V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
- H-bridge
- Inverters
- Tape width
- Quantity