HM60N05 - N-Channel Enhancement Mode Power MOSFET

Product Overview

H&M Semiconductor

Part number	HM60N05
Manufacturer	H&M Semiconductor
File Size	617.19 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM60N05 Datasheet
Additional preview pages of the HM60N05 datasheet.

The HM60N05 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

VDS = 50V,ID =60A RDS(ON) < 7.6mΩ @ VGS=10V (Typ:5.7mΩ) RDS(ON) < 8.0mΩ @ VGS=4.5V (Typ:6.3mΩ).
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Low gate to drain charge to reduce switching losses Schematic diagram HM60N05.

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Published: Jun 30, 2025 |