• Part: HM75N06KA
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: H&M Semiconductor
  • Size: 607.17 KB
Download HM75N06KA Datasheet PDF
H&M Semiconductor
HM75N06KA
Description The HM1.$ uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features - VDS =60V,ID =75A RDS(ON) < 8.5mΩ @ VGS=10V RDS(ON) < 12mΩ @ VGS=4.5V - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Good stability and uniformity with high EAS - Excellent package for good heat dissipation - Special process technology for high ESD capability Application - Power switching application - Hard switched and high frequency circuits - Uninterruptible Power Supply Schematic diagram HM1.$ Marking and pin assignment 100% UIS TESTED! 100% ΔVds TESTED! TO-252-2L top view Package Marking and Ordering Information Device Marking Device Device Package HM1.$+M1.$ TO-252-2L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source...