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HM75N06KA - N-Channel Enhancement Mode Power MOSFET

General Description

The HM1.$ uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS =60V,ID =75A RDS(ON) < 8.5mΩ @ VGS=10V RDS(ON) < 12mΩ @ VGS=4.5V.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability.

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Full PDF Text Transcription (Reference)

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HM1.$ N-Channel Enhancement Mode Power MOSFET Description The HM1.$ uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =75A RDS(ON) < 8.5mΩ @ VGS=10V RDS(ON) < 12mΩ @ VGS=4.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible Power Supply Schematic diagram HM1.