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HM8205 - Dual N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The HM8205 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

  • VDS = 1V,ID = 4A RDS(ON).

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Datasheet preview – HM8205

Datasheet Details

Part number HM8205
Manufacturer H&M Semiconductor
File Size 455.55 KB
Description Dual N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM8205 Datasheet
Additional preview pages of the HM8205 datasheet.

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Full PDF Text Transcription

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HM8205 Dual N-Channel Enhancement Mode Power MOSFET Description The HM8205 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 1V,ID = 4A RDS(ON) <45mΩ @ VGS=2.5V RDS(ON) <29mΩ @ VGS=4.
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