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HM8205 - Dual N-Channel Enhancement Mode Power MOSFET

General Description

The HM8205 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = 1V,ID = 4A RDS(ON).

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HM8205 Dual N-Channel Enhancement Mode Power MOSFET Description The HM8205 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 1V,ID = 4A RDS(ON) <45mΩ @ VGS=2.5V RDS(ON) <29mΩ @ VGS=4.