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HM90N07D - N-Channel Trench Power MOSFET

Description

The HM90N07D is N-channel MOS Field Effect Transistor designed for high current switching applications.

Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications.

Features

  • VDS=70V；ID=90A@ VGS=10V； RDS(ON)=7.5mΩ(Typ) @ VGS=10V.
  • Special Designed for E-Bike Controller.

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Datasheet preview – HM90N07D

Datasheet Details

Part number HM90N07D
Manufacturer H&M Semiconductor
File Size 670.17 KB
Description N-Channel Trench Power MOSFET
Datasheet download datasheet HM90N07D Datasheet
Additional preview pages of the HM90N07D datasheet.

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Full PDF Text Transcription

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N-Channel Trench Power MOSFET General Description The HM90N07D is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features ● VDS=70V；ID=90A@ VGS=10V； RDS(ON)=7.5mΩ(Typ) @ VGS=10V ● Special Designed for E-Bike Controller Application ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● 48V E-Bike Controller Applications ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply HM90N07D TO-263-2L top view Schematic diagram VDSS = 70V IDSS = 90A RDS(ON) = 4.
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