Datasheet Summary
Dual N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The HM9926B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
GENERAL Features
- VDS =20V,ID =5A RDS(ON) < 50mΩ @ VGS=4.5V RDS(ON) < 63mΩ @ VGS=2.5V
Schematic diagram
- High density cell design for ultra low Rdson
- Fully characterized Avalanche voltage and current
Application
- Power switching application
- Hard Switched and High Frequency Circuits
- Uninterruptible Power Supply
Marking and pin Assignment
SOP-8 top view
Package Marking And Ordering Information
Device Marking
Device
Device...