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HM9926B - Dual N-Channel Enhancement Mode Power MOSFET

General Description

The HM9926B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS =20V,ID =5A RDS(ON) < 50mΩ @ VGS=4.5V RDS(ON) < 63mΩ @ VGS=2.5V Schematic diagram.
  • High density cell design for ultra low Rdson.
  • Fully characterized Avalanche voltage and current.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HM9926B Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM9926B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES ● VDS =20V,ID =5A RDS(ON) < 50mΩ @ VGS=4.5V RDS(ON) < 63mΩ @ VGS=2.