HM9926B - Dual N-Channel Enhancement Mode Power MOSFET

Description

The HM9926B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

VDS =20V,ID =5A RDS(ON) < 50mΩ @ VGS=4.5V RDS(ON) < 63mΩ @ VGS=2.5V Schematic diagram.
High density cell design for ultra low Rdson.
Fully characterized Avalanche voltage and current.

H&M Semiconductor

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Datasheet Details

Part number	HM9926B
Manufacturer	H&M Semiconductor
File Size	485.03 KB
Description	Dual N-Channel Enhancement Mode Power MOSFET
Datasheet	HM9926B Datasheet
Additional preview pages of the HM9926B datasheet.

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Full PDF Text Transcription

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HM9926B Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM9926B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES ● VDS =20V,ID =5A RDS(ON) < 50mΩ @ VGS=4.5V RDS(ON) < 63mΩ @ VGS=2.

Published: Apr 12, 2021 |