HMN10N65Q Description
650V GaN-on-Silicon Enhancement-mode Power Transistor in Dual Flat No-lead Package (DFN) with 5 mm × 6 mm size.
HMN10N65Q Key Features
- Enhancement-mode transistor
- normally-OFF power switch
- Ultra-high switching frequency
- No reverse-recovery charge
- Low gate charge, low output charge
- Qualified for industrial