HMS130N20 - N-Channel Super Trench II Power MOSFET

Product Overview

H&M Semiconductor

Part number	HMS130N20
Manufacturer	H&M Semiconductor
File Size	812.37 KB
Description	N-Channel Super Trench II Power MOSFET
Datasheet	HMS130N20 Datasheet
Additional preview pages of the HMS130N20 datasheet.

switching performance.

RDS(ON) and Qg.

VDS =200V,ID =130A RDS(ON)=9.4mΩ , typical (TO-220)@ VGS=10V RDS(ON)=9.4mΩ , typical (TO-263)@ VGS=10V.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
175 °C operating temperature.
Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TO-220 TO-263 Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package HMS130N20 HMS130N20 TO-220 HMS130N20D HMS130N20D TO-263 Reel Size - Tape width -.

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Published: Jun 30, 2025 |