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HMS15N50F - 500V N-Channel MOSFET

Description

theacsh--nb7Lo.oe6wlAeo,gng5ay0tee0.

Vsch,paRerDgcSe(oi(na)ttylylppy.

Features

  • -15A, 500V, RDS(on) typ. = 0.28Ω@VGS = 10 V - Low gate charge ( typical 70nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability HMS15N50F HMS15N50 HMS15N50T HMS15N50A D TO-220F GDS GDS TO-220 GDS TO-247 GDS TO-3P G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter TO-220/247/3P TO-220F VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) IDM Drain Current - Pulsed (Note 1.

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Other Datasheets by H&M Semiconductor

Part Number Description
HMS15N50 500V N-Channel MOSFET
HMS15N50A 500V N-Channel MOSFET
HMS15N50T 500V N-Channel MOSFET
HMS15N65 N-Channel Super Junction Power MOSFET
HMS15N65D N-Channel Super Junction Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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General Description This Power MOSFET is producFeeadtuurseisng H&M Semi’s Advanced Super-Junction This advanced technology theacsh--nb7Lo.oe6wlAeo,gng5ay0tee0. Vsch,paRerDgcSe(oi(na)ttylylppy. i=cat0al .5i2lΩo5n@rCeV)dGS = 10 V to minimize conduction loss, pr-oHvigihdreugsguedpneesrsior switching performance, and withstand hig-- F1h0a0set%nswaevitracghlaiynngcpheutlessetedin the avalanche and commutation m-oImdpero.ved dv/dt capability These devices are well suited for AC/DC power conversion HMS15N50F,HMS15N50 HMS15N50T,HMS15N50A 500V N-Channel MOSFET Features -15A, 500V, RDS(on) typ.= 0.
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