HMS50N10A Datasheet N-Channel Super Trench Power MOSFET

Manufacturer: H&M Semiconductor

Overview: HMS50N10A N-Channel Super Trench Power MOSFET.

HMS50N10A n-channel super trench power mosfet by H&M Semiconductor - Datasheet Preview

Datasheet Details

Part number	HMS50N10A
Manufacturer	H&M Semiconductor
File Size	917.27 KB
Description	N-Channel Super Trench Power MOSFET
Download	HMS50N10A Download (PDF)

General Description

The HMS50N10A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

This device is ideal for high-frequency switching and synchronous rectification.

Key Features

VDS =100V,ID =50A RDS(ON) =13.5mΩ(Typ) @ VGS=10V RDS(ON) =18.5mΩ(Typ) @ VGS=4.5V.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
175 °C operating temperature.
Pb-free lead plating.
100% UIS tested.

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