• Part: HMS6N10PR
  • Description: N-Channel Super Trench Power MOSFET
  • Category: MOSFET
  • Manufacturer: H&M Semiconductor
  • Size: 686.84 KB
Download HMS6N10PR Datasheet PDF
H&M Semiconductor
HMS6N10PR
Description The HMS6N10PR uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features - VDS =100V,ID =6A RDS(on)<115mΩ(at VGS=10V RDS(on)<130mΩ(at VGS=4.5V - Excellent gate charge x RDS(on) product(FOM) - Very low on-resistance RDS(on) - 150 °C operating temperature - Pb-free lead plating - 100% UIS tested Application - DC/DC Converter - Ideal for high-frequency switching and synchronous rectification 100% UIS TESTED! Schematic diagram SOT89-3L top view Package Marking and Ordering Information Device Marking Device Device Package SOT89-3L Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Dra...