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HMS6N10PR - N-Channel Super Trench Power MOSFET

Product Overview

H&M Semiconductor

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HMS6N10PR N-Channel Super Trench Power MOSFET by H&M Semiconductor - Datasheet Preview — Datasheet preview – HMS6N10PR

Datasheet Details

Part number	HMS6N10PR
Manufacturer	H&M Semiconductor
File Size	686.84 KB
Description	N-Channel Super Trench Power MOSFET
Datasheet	HMS6N10PR Datasheet
Additional preview pages of the HMS6N10PR datasheet.

HMS6N10PR Product details

Description

The HMS6N10PR uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Features

VDS =100V,ID =6A RDS(on)＜115mΩ（at VGS=10V RDS(on)＜130mΩ（at VGS=4.5V.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
150 °C operating temperature.
Pb-free lead plating.
100% UIS tested.

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Published: Jul 1, 2025 |