HMS80N10 - N-Channel Super Trench II Power MOSFET

Product Overview

H&M Semiconductor

Part number	HMS80N10
Manufacturer	H&M Semiconductor
File Size	826.95 KB
Description	N-Channel Super Trench II Power MOSFET
Datasheet	HMS80N10 Datasheet
Additional preview pages of the HMS80N10 datasheet.

switching performance.

RDS(ON) and Qg.

VDS =V,ID =80A RDS(ON)=7.5mΩ , typical (TO-220)@ VGS=10V RDS(ON)=7.5mΩ , typical (TO-263)@ VGS=10V.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
175 °C operating temperature.
Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TO-220 TO-263 Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package HMS80N10 HMS80N10 TO-220 HMS80N10D HMS80N10D TO-263 Reel Size - Tape width - Quan.

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Published: Jul 1, 2025 |