NCE02H10T - N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

General Description

The HM100N20T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

VDS =200V,ID =100A RDS(ON).

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NCE02H10T n-channel enhancement mode power mosfet by H&M Semiconductor - Datasheet Preview

Datasheet Details

Part number	NCE02H10T
Manufacturer	H&M Semiconductor
File Size	430.79 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE02H10T Datasheet

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N-Channel Enhancement Mode Power MOSFET Description The HM100N20T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.