NCE02H10T
Description
The HM100N20T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
- VDS =200V,ID =100A RDS(ON) <18mΩ @ VGS=10V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
Application
- Power switching application
- Hard switched and high frequency circuits
- Uninterruptible power supply
H017
Schematic diagram
TO-247 top view
100% UIS TESTED! 100% ∆Vds TESTED!
Package Marking and Ordering Information
Device Marking Device Device Package
HM100N20T
HM100N20T
TO-247
Reel Size
- Tape width
Quantity
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Continuo...
