Datasheet Details
| Part number | 8810 |
|---|---|
| Manufacturer | H&M Semiconductor |
| File Size | 673.17 KB |
| Description | Dual N-Channel Enhancement Mode Power MOSFET |
| Datasheet | 8810-HMsemi.pdf |
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Overview: HM8810E Dual N-Channel Enhancement Mode Power MOSFET.
| Part number | 8810 |
|---|---|
| Manufacturer | H&M Semiconductor |
| File Size | 673.17 KB |
| Description | Dual N-Channel Enhancement Mode Power MOSFET |
| Datasheet | 8810-HMsemi.pdf |
|
|
|
The HM8810E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
This device is suitable for use as a load switch or in PWM applications .It is ESD protested.
General
| Part Number | Description |
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