Datasheet Details
| Part number | HM20N120AB |
|---|---|
| Manufacturer | H&M Semiconductor |
| File Size | 798.65 KB |
| Description | IGBT |
| Datasheet | HM20N120AB-HMsemi.pdf |
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Overview: IGBT.
| Part number | HM20N120AB |
|---|---|
| Manufacturer | H&M Semiconductor |
| File Size | 798.65 KB |
| Description | IGBT |
| Datasheet | HM20N120AB-HMsemi.pdf |
|
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KEDA PT IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating), and other soft switching applications.
Absolute Maximum Ratings Symbol Parameter VCES Collector-Emitter Voltage VGES Gate-Emitter Voltage Continuous Collector Current ( TC=25 ℃ ) IC Continuous Collector Current ( TC=100℃ ) ICM Pulsed Collector Current (Note 1) IF Diode Continuous Forward Current ( TC=100 ℃ ) IFM Diode Maximum Forward Current (Note 1) Maximum Power Dissipation ( TC=25 ℃ ) PD Maximum Power Dissipation ( TC=100℃ ) TJ Operating Junction Temperature Range TSTG Storage Temperature Range Thermal Characteristics Value 1200 + 30 40 20 60 20 60 160 60 -55 to +150 -55 to +150 Symbol Rth j-c Rth j-c Rth j-a Parameter Thermal Resistance, Junction to case for IGBT Thermal Resistance, Junction to case for Diode Thermal Resistance, Junction to Ambient Max.
0.78 0.95 40 -1- Shenzhen H&M Semiconductor Co.Ltd http：//www.hmsemi.com Units V V A A A A A W W ℃ ℃ Units ℃/ W ℃/ W ℃/ W +01$% Electrical Characteristics (TC=25℃ unless otherwise noted ) Symbol Parameter BVCES ICES IGES Collector-Emitter Breakdown Voltage Collector-Emitter Leakage Current Gate Leakage Current, Forward Gate Leakage Current, Reverse VGE(th) VCE(sat) Qg Qge Qgc Gate Threshold Voltage Collector-Emitter Saturation Voltage Total Gate Charge Gate-Emitter Charge Gate-Collector Charge t d(on) tr t d(off) tf Eon Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Turn-on Switching Loss Eoff Turn-off Switching Loss Ets Total Switching Loss Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGE= 0V, IC= 250uA VCE= 1200V, VGE= 0V VGE=30V, VCE= 0V VGE= -30V, VCE= 0V VGE= VCE, IC= 250uA VGE=15V, IC= 2
| Part Number | Description |
|---|---|
| HM20N120T | IGBT |
| HM20N120TB | IGBT |
| HM20N50F | 500V N-Channel MOSFET |
| HM20N60A | N-Channel MOSFET |
| HM2126 | WHITE LED DRIVER |
| HM24C128 | EEPROM |
| HM24C256 | EEPROM |
| HM24C512 | EEPROM |
| HM2740 | High Performance Low Cost Off-line PWM Power Switch |
| HM2741 | High Performance Low Cost Off-line PWM Power Switch |