Datasheet4U Logo Datasheet4U.com

HM4030 - N-Channel Trench Power MOSFET

General Description

The+0 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications.

Key Features

  • VDS=100V; ID=190A@ VGS=10V; RDS(ON).

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HM4033 PNP EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics
HM4033 PNP EPITAXIAL PLANAR TRANSISTOR GME
HM4033 PNP Plastic Encapsulate Transistor MCC
HM4054 Independent linear lithium battery charger H&Msemi
HM4054B Independent linear lithium battery charger H&Msemi

Other Datasheets by H&M Semiconductor

Part Number Description
HM4033 PFM Step-Up Battery Charge Controller
HM4052 3MHz switching single-cell lithium battery charger
HM4056F Standalone Linear Li-Ion Battery Charger
HM40N02Q MOSFET
HM4806 Dual N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
N-Channel Trench Power MOSFET +0 General Description The+0 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features ● VDS=100V; ID=190A@ VGS=10V; RDS(ON)<7.1mΩ @ VGS=10V ● Special Designed for E-Bike Controller Application ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● 72V E-Bike controller applications ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply To-220 Top View Schematic Diagram VDSS = 100V IDSS = 190A RDS(ON)= 6.8mΩ Package Marking and Ordering Information Device Marking Device Device Package +0 +0 TO-220 Reel Size - Table 1.