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HM40N02Q - MOSFET

General Description

The HM40N02Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS =20V,ID =40A RDS(ON).

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HM40N02Q Description The HM40N02Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =20V,ID =40A RDS(ON) <5mΩ @ VGS=4.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Application ● Load switching ● Hard switched and high frequency circuits ● Uninterruptible power supply Schematic diagram Pin Assignment 100% UIS TESTED! 100% ∆Vds TESTED! DFN 3.3x3.