HM730F - 400V N-Channel MOSFET

This page provides the datasheet information for the HM730F, a member of the HM730 400V N-Channel MOSFET family.

Product Overview

H&M semi

Datasheet Details

Part number	HM730F
Manufacturer	H&M semi
File Size	296.89 KB
Description	400V N-Channel MOSFET
Datasheet	HM730F Datasheet
Additional preview pages of the HM730F datasheet.

HM730F Product details

Description

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

6.0A, 400V, RDS(on) = 1.00Ω @VGS = 10 V.
Low gate charge ( typical 18nC).
Fast switching.
100% avalanche tested.
Improved dv/dt capability {D GDS TO-220 GD S TO-220F.
◀▲ {G.
{S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Si.

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Published: Apr 18, 2024 |