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HM75N75K - N-Channel MOSFET

General Description

The HM75N.

uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in PWM, load switching and general purpose applications.

Key Features

  • VDS=75V；ID=A@ VGS=10V； RDS(ON).

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HM75N. N-Channel Enhancement Mode Power MOSFET General Description Product Summary The HM75N. uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. BVDSS typ. 75 9 RDS(ON) typ. 7.0 mΩ max. 9.