HM75N80 - N-Channel Power MOSFET

H&M Semiconductor

General Description

The HM75N80 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in PWM, load switching and general purpose applications.

BVDSS typ.

Key Features

VDS=75V；ID=80A@ VGS=10V； RDS(ON).

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HM75N80 n-channel power mosfet by H&M Semiconductor - Datasheet Preview

Datasheet Details

Part number	HM75N80
Manufacturer	H&M Semiconductor
File Size	595.58 KB
Description	N-Channel Power MOSFET
Datasheet	HM75N80 Datasheet

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HM75N80 N-Channel Enhancement Mode Power MOSFET General Description Product Summary The HM75N80 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. BVDSS typ. 84 V RDS(ON) typ. 6.5 mΩ max. 8.