HM9N70 Description
Pin Description G D S TO-220 G D S TO-220F Package Marking and Ordering Information Device Marking HM9N70 Device HM9N70 Device Package TO-220/F Reel Size - Tape width - Page 1 Shenzhen H&M Semiconductor Co.Ltd http：//.hmsemi. HM9N70 700VDS／±30VGS／9A(ID) N-Channel Enha ncement Mode MOSFET Shenzhen H&M Semiconductor Co.Ltd http：//.hmsemi. HM9N70 700VDS／±30VGS／9A(ID) N-Channel Enha ncement Mode MOSFET Shenzhen H&M...
HM9N70 Key Features
- VDSS=700V／VGSS=±30V／ID=9A RDS(ON)=5mΩ(max.)@VGS=10V
- Low Dense Cell Design
- Reliable and Rugged
- Advanced trench process technology