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HM9N70 Datasheet N-Channel MOSFET

Manufacturer: H&M Semiconductor

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General Description

Pin Description G D S TO-220 G D S TO-220F Package Marking and Ordering Information Device Marking HM9N70 Device HM9N70 Device Package TO-220/F Reel Size - Tape width - Page 1 Shenzhen H&M Semiconductor Co.Ltd http：//www.hmsemi.com Quantity - HM9N70 700VDS／±30VGS／9A(ID) N-Channel Enha ncement Mode MOSFET Key Electrical Characteristics (TO-220 package) Parameter Description Min Typ BVDSS, V Drain-to-Source Breakdown Voltage 700 - ID, A Continuous Drain Current - - RDS(on), Ohm Static Drain-to-Source On Resistance - 1,1 VGS(th), V Gate Threshold Voltage 2,0 - IDSS, μA Drain-to-Source Leakage Current - - IGSS, nA Gate-to-Source Leakage Current - - Operating Junction and Tj, TSTG, °C Storage Temperature Range - 55 ~ +150 * Drain current limited by junction temperature Max Test condition - VGS =0 V, ID =250 μA 9* Tj = 25 °C 1,2 VGS=10 V, ID=4,5 A 4,0 VDS = VGS, ID =250 μA 10 VDS = 700 V, VGS= 0 V ±100 VGS= ± 30 V, VDS = 0 V Page 2 Shenzhen H&M Semiconductor Co.Ltd http：//www.hmsemi.com HM9N70 700VDS／±30VGS／9A(ID) N-Channel Enha ncement Mode MOSFET Shenzhen H&M Semiconductor Co.Ltd http：//www.hmsemi.com HM9N70 700VDS／±30VGS／9A(ID) N-Channel Enha ncement Mode MOSFET Shenzhen H&M Semiconductor Co.Ltd http：//www.hmsemi.com HM9N70 700VDS／±30VGS／9A(ID) N-Channel Enha ncement Mode MOSFET ATTENTION: ■ Any and all H&M SEMI products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expecte

Overview

HM9N70 700VDS／±30VGS／9A(ID) N-Channel Enha ncement Mode MOSFET.

Key Features

  • VDSS=700V／VGSS=±30V／ID=9A RDS(ON)=5mΩ(max. )@VGS=10V.
  • Low Dense Cell Design.
  • Reliable and Rugged.
  • Advanced trench process technology .

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