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2314 Datasheet

N-channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

2314 Overview

The HM2314B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application.

2314 Key Features

  • VDS = 20V,ID = 4.5A RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 33mΩ @ VGS=4.5V
  • High power and current handing capability
  • Lead free product is acquired
  • Surface mount package
  • Battery protection -Load switch -Power management

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