HM09P12D
Description
The HM09P12D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications.
General Features
- VDS = -12V,ID = -9A RDS(ON) < 35mΩ @ VGS=-2.5V RDS(ON) < 25mΩ @ VGS=-4.5V
- Advanced trench MOSFET process technology
- Ultra low on-resistance with low gate charge
Application
- PWM applications
- Load switch
- Battery charge in cellular handset
+03'
S Schematic diagram
Pin assignment
DFN2X2-6L bottom view
Package marking and ordering information
Device Marking
Device
Device Package
DFN2X2-6L
Reel Size
- Tape Width
- Quantity
- Absolute maximum ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current -Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage...
