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HM09P12D Datasheet

P-channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

HM09P12D Overview

The HM09P12D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications.

HM09P12D Key Features

  • VDS = -12V,ID = -9A RDS(ON) < 35mΩ @ VGS=-2.5V RDS(ON) < 25mΩ @ VGS=-4.5V
  • Advanced trench MOSFET process technology
  • Ultra low on-resistance with low gate charge

HM09P12D Distributor