HM10DN06D datasheet by H&M Semiconductor.
| Part number | HM10DN06D |
|---|---|
| Datasheet | HM10DN06D-HMSemiconductor.pdf |
| File Size | 1.50 MB |
| Manufacturer | H&M Semiconductor |
| Description | N-Channel Enhancement Mode Power MOSFET |
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The HM10DN06D is the highest performance trench N-ch MOSFET with extreme high cell density,which provide excellent RDSON and gate chargens for most of the synchronous buck converter applications . The HM10DN06D meet the RoHS and Green Product requirement,100% EAS guaranteed with full function reliability approved. Product Summery BVDSS RDSON 60V 34 mΩ ID 10 A Applicatio z High Frequency Point-of-Load Synchronous...
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