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HM10DN06D Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

Overview: HM10DN06D N-Channel Enhancement Mode Power MOSFET General.

General Description

The HM10DN06D is the highest performance trench N-ch MOSFET with extreme high cell density,which provide excellent RDSON and gate chargens for most of the synchronous buck converter applications .

The HM10DN06D meet the RoHS and Green Product requirement,100% EAS guaranteed with full function reliability approved.

Product Summery BVDSS RDSON 60V 34 mΩ ID 10 A Applicatio z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch Schematic diagram

Key Features

  • z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available DFN5X6-8L t op view Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=70℃ IDM EAS IAS PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Storage Tempe.

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