HM10DP06D datasheet by H&M Semiconductor.
| Part number | HM10DP06D |
|---|---|
| Datasheet | HM10DP06D-HMSemiconductor.pdf |
| File Size | 857.79 KB |
| Manufacturer | H&M Semiconductor |
| Description | P-Channel Enhancement Mode Field Effect Transistor |
|
|
Pulse Width≤300us,Duty cycle ≤2%. RθJA is the sum of the junction-to-case and case-to-ambient , where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design, while RθJA is determined by the board design.
View all H&M Semiconductor datasheets
| Part Number | Description |
|---|---|
| HM10DN06D | N-Channel Enhancement Mode Power MOSFET |
| HM100N03 | N-Channel Enhancement Mode Power MOSFET |
| HM100N03D | N-Channel Enhancement Mode Power MOSFET |
| HM100N03GA | N-Channel Enhancement Mode Power MOSFET |
| HM100N03KA | N-Channel Enhancement Mode Power MOSFET |
| HM100P03K | MOSFET |
| HM100P35E | MOSFET |
| HM1084 | 5A LOW DROPOUT POSITIVE REGULATOR |
| HM10N10K | N-Channel Enhancement Mode Power MOSFET |
| HM10N15D | N-Channel Enhancement Mode Power MOSFET |
