HM10DP06D is P-Channel Enhancement Mode Field Effect Transistor manufactured by H&M Semiconductor.
| Part Number | Description |
|---|---|
| HM10DN06D | N-Channel Enhancement Mode Power MOSFET |
| HM100N03 | N-Channel Enhancement Mode Power MOSFET |
| HM100N03D | N-Channel Enhancement Mode Power MOSFET |
| HM100N03GA | N-Channel Enhancement Mode Power MOSFET |
| HM100N03KA | N-Channel Enhancement Mode Power MOSFET |
Pulse Width≤300us,Duty cycle ≤2%. RθJA is the sum of the junction-to-case and case-to-ambient , where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design, while RθJA is determined by the board design.
