HM10N10K
DESCRIPTION
The HM10N10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
GENERAL FEATURES
- VDS =100V,ID =9.6A RDS(ON) < 130mΩ @ VGS=10V (Typ:105mΩ)
- High density cell design for ultra low Rdson
- Fully characterized Avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
Application
- Power switching application
- Hard Switched and High Frequency Circuits
- Uninterruptible Power Supply
Schematic diagram
H&M SEMI
Marking and pin Assignment
100% UIS TESTED! 100% ΔVds TESTED!
TO-252-2L top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
TO-252-2L
Reel Size
- Tape width
- Quantity
- Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source...
