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HM10P10Q Datasheet

P-channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

HM10P10Q Overview

The HM10P10Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

HM10P10Q Key Features

  • VDS =-100V,ID =-10A
  • Super high dense cell design
  • Advanced trench process technology
  • Reliable and rugged
  • High density cell design for ultra low On-Resistance
  • Power management in notebook puter
  • Portable equipment and battery powered systems
  • Tape width
  • Quantity

HM10P10Q Distributor