HM10P10Q
Description
The HM10P10Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested.
General Features
- VDS =-100V,ID =-10A
RDS(ON) <100mΩ @ VGS=-10V
(Typ:85mΩ)
- Super high dense cell design
- Advanced trench process technology
- Reliable and rugged
- High density cell design for ultra low On-Resistance
Application
- Power management in notebook puter
- Portable equipment and battery powered systems
Schematic diagram DFN 3x3 EP top view
100% UIS TESTED! 100% ∆Vds TESTED!
Package Marking and Ordering Information
Device Marking
Device
Device Package
DFN3X3-8L
Reel Size
- Tape width
- Quantity
- Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current
Maximum Power...
