HM10SDN10D
Description
The HM10SDN10D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of
RDS(ON) and Qg. It includes two specialized MOSFETs in a dual
Power DFN5x6 package.
General Features
Q1 "High Side" MOSFET
Q2 "Low Side" MOSFET
- VDS =0V,ID = 0A
VDS =0V,ID =10A
RDS(ON) <mΩ @ VGS=10V RDS(ON) <1mΩ @ VGS=10V
RDS(ON)<mΩ @ VGS=4.5V RDS(ON) <mΩ @ VGS=4.5V
- Excellent gate charge x RDS(on) product(FOM)
- Very low on-resistance RDS(on)
- 150 °C operating temperature
- Pb free terminal plating
- Ro HS pliant
- Halogen free
Application
- pact DC/DC converter applications
100% UIS TESTED!
100% ∆Vds TESTED!
Schematic Diagram pin assignment
Top View
Bottom View
Package Marking and Ordering Information
Device Marking
Device
Device Package
HM10SDN10D HM10SDN10D
DFN5X6-8L
Reel Size 330mm
Tape width...
