HM18DP02Q Overview
Description
Trench Power MV MOSFET technology - High density cell design for Low RDS(ON) - High Speed switching.
| Part | HM18DP02Q |
|---|---|
| Description | P-Channel Enhancement Mode Field Effect Transistor |
| Category | Transistor |
| Manufacturer | H&M Semiconductor |
| Size | 908.97 KB |
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