Datasheet Details
| Part number | HM18DP02Q |
|---|---|
| Manufacturer | H&M Semiconductor |
| File Size | 908.97 KB |
| Description | P-Channel Enhancement Mode Field Effect Transistor |
| Datasheet | HM18DP02Q-HMSemiconductor.pdf |
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Overview: HM18DP02Q P-Channel Enhancement Mode Field Effect Transistor DFN3.3X3.3 Product Summary ● VDS ● ID ● RDS(ON)( at VGS= -4.5V) ● RDS(ON)( at VGS= -2.
| Part number | HM18DP02Q |
|---|---|
| Manufacturer | H&M Semiconductor |
| File Size | 908.97 KB |
| Description | P-Channel Enhancement Mode Field Effect Transistor |
| Datasheet | HM18DP02Q-HMSemiconductor.pdf |
|
|
|
● Trench Power MV MOSFET technology ● High density cell design for Low RDS(ON) ● High Speed switching Applications ● Battery protection ● Load switch ● Power management ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Maximum Unit Drain-source Voltage VDS -20 V Gate-source Voltage VGS Drain Current B TA=25℃ @ Steady State TA=100℃ @ Steady State ID Drain Current B TA=25℃ @ Steady State TA=70℃ @ Steady State ID Pulsed Drain Current A IDM ±10 V -18 A -12.6 -18 -16.2 A -55 A Single Pulse Avalanche EnergyB EAS Total Power Dissipation B TA=25℃ @ Steady State TA=100℃ @ Steady State PD Total Power Dissipation B TA=25℃ @ Steady State TA=70℃ @ Steady State PD Thermal Resistance Junction-to-Ambient @ Steady State B RθJC 31 32 12.8 32 12.8 3.9 mJ W W ℃/ W Thermal Resistance Junction-to-Case @ Steady State C RθJA 42 ℃/ W Junction and Storage Temperature Range ■ Ordering Information (Example) PREFERED P/N PACKING CODE Marking TJ ,TSTG -55～+150 ℃ MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE HM18DP03Q F1 HM18DP03Q 5000 1/6 10000 100000 13“ reel HM18DP02Q ■ Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Static Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage BVDSS IDSS IGSS VGS(th) RDS(ON) VSD VGS= 0V, ID=-250μA VDS=-20V,VGS=0V,TC=25℃ VGS= ±10V, VDS=0V VDS= VGS, ID=-250μA VGS= -2.5V, ID=-2A VGS= -4.5V, ID=-4A IS=-18A,VGS=0V -20 V -1 μA ±100 nA -0.35 -1.0 V 40 mΩ 32 -0.8 -1.2 V Maximum Body-Diode Continuous Current IS Dynamic Parameters -18 A
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