HM1N70PR
Description
：
HM1N70PR, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching
VDSS ID PD (TC=25℃) RDS(ON)Max
700 1.0 3 10.5 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is
SOT-89-3L, which accords with the Ro HS standard.
Features
： z Fast Switching z Low ON Resistance(Rdson≤10.5Ω) z Low Gate Charge (Typical Data:6.0n C) z Low Reverse transfer capacitances(Typical:4p F) z 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
Rating
VDSS
IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3
TJ，Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche...
