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HM2301B

HM2301B is P-Channel Trench Power MOSFET manufactured by H&M Semiconductor.
HM2301B datasheet preview

HM2301B Datasheet

Part number HM2301B
Download HM2301B Datasheet (PDF)
File Size 803.79 KB
Manufacturer H&M Semiconductor
Description P-Channel Trench Power MOSFET
HM2301B page 2 HM2301B page 3

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HM2301B Distributor

HM2301B Description

The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.

HM2301B Key Features

  • VDS = -20V,ID = -2.5A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V
  • High power and current handing capability
  • Lead free product is acquired
  • Surface mount package

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