Datasheet Summary
P-Channel Enhancement Mode Power MOSFET
Description
The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.
General Features
- VDS = -20V,ID = -2.5A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V
- High power and current handing capability
- Lead free product is acquired
- Surface mount package
S Schematic diagram
A1SHB
Marking and pin assignment
Application
- PWM applications
- Load switch
SOT-23 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
A12SHB
SOT-23...
