Datasheet Summary
P-Channel 20V (D-S) MOSFET
GENERAL DESCRIPTION
The HM2301BKR is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
APPLICATIONS
- Power Management in Note book
- Portable Equipment
- Battery Powered System
Features
- RDS(ON)= 0.48Ω @VGS=-4.5V
- RDS(ON)= 0.67Ω @VGS=-2.5V
- RDS(ON)= 0.95Ω @VGS=-1.8V
- RDS(ON)= 2.20Ω @VGS=-1.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
- Capable doing Cu wire bonding
- Load Switch
- DSC
Marking and pin...
