HM2301BSR
HM2301BSR is P-Channel 20V MOSFET manufactured by H&M Semiconductor.
DESCRIPTION
The HM2301BSR is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
APPLICATIONS
- Power Management in Note book
- Portable Equipment
- Battery Powered System
FEATURES
- RDS(ON)= 0.48Ω @VGS=-4.5V
- RDS(ON)= 0.67Ω @VGS=-2.5V
- RDS(ON)= 0.95Ω @VGS=-1.8V
- RDS(ON)= 2.20Ω @VGS=-1.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
- Capable doing Cu wire bonding
- Load Switch
- DSC
Marking and pin Assignment
SOT-523 top view
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter Drain-Source Voltage Gate-Source Voltage
Symbol VDS VGS
Maximum Ratings
-20 ±6
Unit V V
- Th Oct, 2014-Ver1.0
Shenzhen H&M Semiconductor Co.Ltd http：//.hmsemi.c...
