HM2301BSR Overview
The HM2301BSR is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System.
HM2301BSR Key Features
- RDS(ON)= 0.48Ω @VGS=-4.5V
- RDS(ON)= 0.67Ω @VGS=-2.5V
- RDS(ON)= 0.95Ω @VGS=-1.8V
- RDS(ON)= 2.20Ω @VGS=-1.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current
- Capable doing Cu wire bonding
- Load Switch
HM2301BSR Applications
- Power Management in Note book
